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Abstract
Copper nitride (Cu3N) thin films were deposited on glass via DC reactive magnetron sputtering at various N2 flow rates and partial pressures with 150°C substrate temperature. X-ray diffraction and scanning electron microscopy were used to characterize the microstructure and morphology. The results show that the films are composed of Cu3N crystallites with anti-ReO3 structure. The microstructure and morphology of the Cu3N film strongly depend on the N2 flow rate and partial pressure. The cross-sectional micrograph of the film shows typical columnar, compact structure. The thermal stabilities of the films were investigated using vacuum annealing under different temperature. The results show that the introducing of argon in the sputtering process decreases the thermal stability of the films.
Highlights
Transition metal nitrides show a wide variety of properties and have lots of applications, and some of them have acquired a large number of industrial application
The electrical resistivity of the films varied from 2 × 10−3 Ω cm to about 103 Ω cm, and the optical band gap of the films increased from 0.8 eV to 1.9 eV with the various sputtering process parameters [12,13,14,15]
In order to study the thermal stability of Cu3N thin films, the as-deposited samples were annealed in vacuum for 1 h at a temperature ranging from 150∘C to 300∘C
Summary
Copper nitride pressures with (1C50u∘3CNs)uthbisntrfaitlemtsewmepreerdaetuproes.itXed-roayn glass via DC reactive magnetron sputtering at various N2 flow diffraction and scanning electron microscopy were used to rates and partial characterize the microstructure and morphology. The results show that the films are composed of Cu3N crystallites with anti-ReO3 structure. The microstructure and morphology of the Cu3N film strongly depend on the N2 flow rate and partial pressure. The cross-sectional micrograph of the film shows typical columnar, compact structure. The thermal stabilities of the films were investigated using vacuum annealing under different temperature. The results show that the introducing of argon in the sputtering process decreases the thermal stability of the films
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