Abstract
High sheet resistance multilayers consisting of Ga-doped ZnO (ZnO:Ga) and Ga-Y-codoped ZnO (ZnO:Ga,Y) films were investigated. These films were deposited by DC magnetron sputtering. The sheet resistances of substrate/(ZnO:Ga,Y)/(ZnO:Ga)/(ZnO:Ga,Y) multilayers are adjustable in the range of 450–1600 Ω/sq by choosing the proper thickness of the (ZnO:Ga) layer. This is because the (ZnO:Ga,Y) layer has a high resistivity of about 1 Ω cm and does not practically contribute the sheet resistance of the multilayers. The sheet resistance of the multilayers shows almost no change after a long heating at 100°C in air. This is probably due to the improvement in crystallinity of the (ZnO:Ga) layer deposited on the (ZnO:Ga,Y) underlayer and the protection of the (ZnO:Ga) layer from its oxidation by the (ZnO:Ga,Y) overlayer.
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