Abstract
An isochronal annealing series was performed in order to investigate the thermalbehaviour of as-grown defects in Al-doped 6H-SiC. Five hole traps have been detected,by means of deep level transient spectroscopy (DLTS), above the valence band(EV) in the 0.2–1.3 eV energy range. One trap, labelled MZ2, anneals out after a1800 °C heat treatment, while the others display higher thermal stability. The nature of thesecentres is discussed on the basis of the previous experimental and theoretical data found inthe literature. Particular emphasis has been given to a trap labelled MZ3, which weidentified as the D-centre, and to the effect that the electric field has on its emission timeconstant.
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