Abstract
In this letter, we demonstrate the stability of Te–Ti thin films as a barrier against Cu after thermal annealing. Te–Ti chalcogenide glass films of composition Te0.20Ti0.70O0.10 and thickness 35nm are annealed in vacuum for up to 30min at several temperatures up to 600°C. Four-point-probe analysis results show that the Cu layers are stable up to 500°C, with abnormal increases in resistance after annealing at 600°C. The Te–Ti thin film serves as a barrier to thermal Cu diffusion up to 500°C, as revealed using Rutherford backscattering spectrometry. X-ray diffractometry indicates Cu grain growth up to 500°C and phase instability of the Te–Ti barrier at 600°C. These results indicate the potential of Te–Ti thin films as a copper diffusion barrier in high temperature microelectronics and integrated circuits.
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