Abstract
The thermal stability of blank and BF2−-implanted cobalt silicide (CoSi2) films annealed in a furnace with flowing nitrogen was investigated. It was found that BF2+ implantation can significantly stabilize thin silicide films during high-temperature annealing. This result can be attributed to an increase in surface and interface energy. For a CoSi2 film with a thickness of 350 Å, the silicide releases its high surface energy through low-energy silicon surface exposure at elevated annealing temperatures (≥800 °C). The optimal BF2+ implantation energy for a cobalt silicide layer 350 Å thick is 50 keV. At this energy, a dose of 2×1015 cm−2 is sufficient to improve the high-temperature stability of CoSi2 film. The highest annealing temperature without degrading the CoSi2 film can be increased by 100 °C using the optimal implantation conditions.
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