Abstract

The techniques of re‐emitted positron spectroscopy (RPS) have been employed in the first systematic investigation of the positronic properties of the various stoichiometric phases (M2Si, MSi, and MSi2) of Co and Ni silicide films grown in situ on Si substrates. The positron work function is found to be negative for all of the different phases; thus implanted positrons may be re‐emitted. The energy of the re‐emitted positrons is found to have a surprisingly large variation for the different phases. This feature should provide the image contrast necessary to observe each phase on a microscopic scale using the positron re‐emission microscope (PRM). The positron deformation potential, E+d≡V(∂Σ/∂V), was determined for CoSi2 films; it can be used to estimate the size of the positron diffusion constant, which is found to be comparable to that of other metals. Thus the short positron diffusion length (of order 150 A) determined from depth‐profiling measurements of CoSi2 films must be a result of positron trapping...

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