Abstract
Thermal stability of a nanostructured trilayer synthetic antiferromagnet is investigated in the Worledge model. No or minimal shape anisotropy effect is predicted from the model due to the simplifying assumption that the self-demagnetizing field is equal to the dipole field. A slight relaxation of the assumption causes a large impact on the thermal stability. In the case that the dipole field is 90% of the demagnetizing field, the energy barrier to spin flop is doubled to 80kT in a typical ellipsoid cell (212×106nm2) for high density magnetic random access memory. The thermal stability of half-selected cells in the writing scheme based on the spin flop is also improved by relaxing the assumption over the applied field range relevant to magnetic random access memory applications.
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