Influence of thermal agitation on the electric field induced precessional magnetization reversal with perpendicular easy axis

Hongguang Cheng,Ning Deng

doi:10.1063/1.4858423

Abstract

We investigated the influence of thermal agitation on the electric field induced precessional magnetization switching probability with perpendicular easy axis by solving the Fokker-Planck equation numerically with finite difference method. The calculated results show that the thermal agitation during the reversal process crucially influences the switching probability. The switching probability can be achieved is only determined by the thermal stability factor Δ of the free layer, it is independent on the device dimension, which is important for the high density device application. Ultra-low error rate down to the order of 10−9 can be achieved for the device of thermal stability factor Δ of 40. Low damping factor α material should be used for the free layer for high reliability device applications. These results exhibit potential of electric field induced precessional magnetization switching with perpendicular easy axis for ultra-low power, high speed and high density magnetic random access memory (MRAM) applications.

Highlights

INTRODUCTIONElectric field induced precessional magnetization switching utilizing the interfacial voltagecontrolled magnetic anisotropy[1,2,3,4,5,6,7,8,9,10,11,12] is a promising candidate for ultra-low power and high speed magnetic random access memory (MRAM) applications.[13,14,15,16] Magnetization reversal induced by electric field only consumes charging and discharging energy, it can reduce writing power consumption by more than two orders of magnitude compared with the spin transfer torque induced switching
We investigated the influence of thermal agitation on the electric field induced precessional magnetization switching probability with perpendicular easy axis by solving the Fokker-Planck equation numerically with finite difference method
The calculated results show that the thermal agitation during the reversal process crucially influences the switching probability

Summary

INTRODUCTION

Electric field induced precessional magnetization switching utilizing the interfacial voltagecontrolled magnetic anisotropy[1,2,3,4,5,6,7,8,9,10,11,12] is a promising candidate for ultra-low power and high speed magnetic random access memory (MRAM) applications.[13,14,15,16] Magnetization reversal induced by electric field only consumes charging and discharging energy, it can reduce writing power consumption by more than two orders of magnitude compared with the spin transfer torque induced switching. The error rate can be obtained by experimental approach,[20,21] theoretical calculation of error rate quantitatively is necessary to the design of electric field induced precessional magnetization switching device. We investigate the influence of thermal agitation on the electric field induced precessional magnetization reversal with perpendicular easy axis[14,16] based on single-domain approximation. We calculate the switching probability directly through solving the Fokker-Planck equation numerically with finite difference method

MODEL AND METHODS

RESULTS AND DISCUSSION

CONCLUSIONS