Abstract
We present an analytical model for calculating the energy barrier for the magnetic field-driven domain wall-mediated magnetization reversal of a magneto-resistive random access memory cell and apply it to study thermal stability factor Δ for various thicknesses of W layers inserted into the free layer (FL) as a function of the cell size and temperature. We find that, by increasing the W thickness, the effective perpendicular magnetic anisotropy (PMA) energy density of the FL film monotonically increases, but at the same time, Δ of the cell mainly decreases. Our analysis shows that, in addition to saturation magnetization Ms and exchange stiffness constant Aex of the FL film, the parameter that quantifies the Δ value of the cell is its coercive field Hc, rather than the net PMA field Hk of the FL film comprising the cell.
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