Abstract
Thermally activated magnetization reversals of submicron sized magnetic tunnel junctions with NiFe single and NiFe∕Ru∕NiFe synthetic antiferromagnet (SAF) free layers are investigated by varying the pulse durations and current amplitudes in switching pulse measurements. The measured data show good agreement with the switching probability predicted by the Arrhenius-Neel theory and switching behaviors with a single activation energy barrier. Estimated activation barriers for magnetization reversals are higher for magnetic tunnel junctions (MTJs) with SAF free layers than MTJs with single free layers. It is believed that the high activation barrier is achieved by the larger magnetic volume of SAF layers.
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