Abstract
We have investigated the composition, atomic transport, chemical reactions, and electrical characteristics following annealing in of ultrathin films deposited on Si substrates thermally nitrided in NO. The dielectric stack was probed by X-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, nuclear reaction analysis, and transmission electron microscopy. It presented an intermediate layer containing silicon oxynitride, hafnium silicate, and possibly hafnium-silicon oxynitride. Capacitance-voltage characteristics were determined before and after annealing. © 2004 The Electrochemical Society. All rights reserved.
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