Abstract
A simple one-dimensional computer model of the dc-thermal behavior of a Schottky-barrier GaAs IMPATT diode has been formulated to compute the conditions for thermal runaway in IMPATT diodes of various designs. The model has been used to determine the thermal stability conditions for three designs of GaAs IMPATT's. The computations lead to several conclusions, the most important of which are the following. a) Junction thermionic emission (leakage) current is thermally unstable, whereas avalanche multiplication is thermally stabilizing. Diode thermal stability at high junction temperature requires that the thermionic emission current be low and the avalanche multiplication be large. b) Lowering of the barrier height caused by contaminants or defects at the junction increases the likelihood of thermal runaway. c) For a given barrier height, the higher the doping of the IMPATT diode, the more resistant it will be to thermal runaway.
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