Abstract
We present an original, accurate, closed-form expression for the thermal resistance of multifingers AlGaN/GaN on SiC FET devices. The model takes into account the thickness of GaN and SiC layers, the gate pitch, length, and width. The model's validity is verified by comparing it with the results of numerical simulations for many different devices. Very close (1-2%) agreement is observed in general. The model is also compared with experimental observations.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
