Thermal properties of semi-insulating GaAs dilutely alloyed with InAs

Abstract

The thermal diffusivity, specific heat, and thermal conductivity of InxGa1−xAs dilute alloys for 0<x<0.013 were determined at 25 °C. For x=0.005, the diffusivity and conductivity are reduced to 60% and 50% of the values for GaAs, respectively. The implications of a reduction in thermal transport due to In alloying are discussed in terms of both crystal growth of dislocation-free GaAs and potential circuit reliability problems associated with lower heat dissipation.