Abstract
Thermal processing of strained-layer InGaAs/GaAs quantum well interfacial properties has been investigated. Room-temperature photoluminescence and X-ray diffraction are measured from as-grown and rapid thermal annealing (RTA) treated InGaAs/GaAs samples. It has been found that RTA improves photoluminescence intensity for the defect-rich samples, due to a removal of non-radiative recombination centers from the quantum well during RTA. Because of interdiffusion of Ga and In atoms during annealing, the InGaAs/GaAs interfaces grade and the quantum confined states shift upwards in energy. On the other hand, RTA degrades the structural quality of the InGaAs/GaAs quantum well if the annealing temperature is too high.
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