Abstract
Rapid thermal annealing (RTA) is a general approach to improve the crystallinity of thin solid films. In this study, we investigated the effects of RTA on the structural and electrical properties of Na-doped ZnMgO films grown by pulsed laser deposition. X-ray diffraction (XRD) results showed that the crystallinity of the Na-doped ZnMgO films was improved with RTA at 400–700 °C, and the grain size became larger as the annealing temperature increased. Moreover, room-temperature photoluminescence (PL) measurements demonstrated decent optical quality of the as-deposited and annealed Na-doped ZnMgO films. Hall-effect measurements showed that the hole concentration increased from 4.9 × 10 14 to 6.6 × 10 15 cm −3 to 1.9 × 10 17 to 8.3 × 10 17 cm −3 while the resistivity and the Hall mobility decreased after the RTA treatments. The conduction type of the films converted from p to n when the annealing temperature is higher than 800 °C. Therefore a wide temperature window to obtain reasonable p-type Na-doped ZnMgO films by RTA is achieved. It is important because RTA is generally needed to obtain p-type Ohmic contact in the fabrication processes of light-emitting diodes (LEDs).
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