Thermal oxidation-grown vanadium dioxide thin films on FTO (Fluorine-doped tin oxide) substrates

Abstract

By deposition of metallic vanadium on FTO substrate in Argon atmosphere at room temperature, the sample was then annealed in furnace for 2h at the temperature of 410°C in air ambient. (110) -orientated vanadium dioxide films were prepared on the FTO surface. A maximum transmittance of ∼40% happened at 900–1250nm region at room temperature. The change of optical transmittance at this region was ∼25% between semiconducting and metallic states. In particular, vanadium dioxide thin films on FTO exhibit semiconductor–metal phase transition at ∼51°C, the width of the hysteresis loop is ∼8°C.