Abstract
In the present study, Se95-xIn5Prx (x = 2, 4, and 6) alloys were prepared using the melt quench technique. X-ray diffraction (XRD) and Raman spectroscopy reveal that the glassy matrix of each sample consists of crystalline entities identified as a mixed phase of indium selenide (HCP) and praseodymium selenide (FCC). TEM images show that the crystalline entities are nanorods stuck to nanoparticles. The thermal stability and optical band gap (direct) decrease (1.974 eV to 1.425 eV) with Pr content. The dielectric constant and loss are maximums for x = 4 at any frequency and temperature (30°C-60 °C). AC conductivity follows the correlated barrier hopping (CBH) model (frequency exponent s<1, and decreases with temperature) with non-intimate valence alteration pairs (NVPA) for x = 2 and 6, and intimate valence alteration pairs (IVPA) for x = 4. AC activation energy decreases with Pr concentration at all frequencies in the study range.
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