Abstract

Soft-error rates (SER) of Flip-Flop (FF) designs in a 16-nm bulk FinFET technology are characterized with thermal neutron, high-energy neutron and alpha particle irradiations. Results show that the contribution of thermal-neutron-induced SER can be higher or lower than alpha-particle-induced SER for different FF designs and can be comparable to high-energy-neutron-induced SER for some FF designs. The contribution of thermal-neutron-induced SER to overall SER can be significantly higher than previously reported.

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