Abstract
Radiation damage caused by neutrons in DMILL npn bipolar transistors was measured. Transistors were exposed to neutrons with different fast-to-thermal flux ratios in the reactor in Ljubljana to fluences up to 5×10 14 n/cm 2 . Degradation of transistor common emitter current gain was measured as the function of fluence. Large degradation caused by thermal neutrons ( E<0.5 eV ) was observed.
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