Abstract
Experimental evidences are given which demonstrate that degradation of the common-emitter forward current gain h/sub FE/ of submicron silicon npn bipolar transistors at low reverse emitter-base junction applied voltage is caused by primary hot holes of the n/sup +//p emitter tunneling current rather than secondary hot electrons generated by the hot holes or thermally-generated hot electrons. Experiments also showed similar kinetic energy dependence of the generation rate of oxide/silicon interface traps by primary hot electrons and primary hot holes. Significant h/sub FE/ degradation was observed at stress voltages less than 2.4 V.
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