Abstract
In this paper, a universal H-bridge circuit is used as a loading emulator to investigate the loss and thermal models of the power semiconductor. Based on its operation principle and modulation method, the dominating factors’ (e.g., power factor, loading current, fundamental frequency, and switching frequency) impact on the thermal stress of power semiconductors is considerably evaluated. The junction temperature in terms of the mean value and its swing is verified by using Piecewise Linear Electrical Circuit Simulation (PLECS) simulation and experimental setup. It helps to allocate the loading condition in order to obtain the desired thermal stress.
Highlights
Reliability and lifetime prediction of power converters have been a major research topic in the last few decades, especially for locomotives, high-power drives, electric vehicles, and renewable energy applications [1,2,3]
The main failures in power semiconductors are caused by thermo-mechanical fatigue, and thermal analysis of the power converter is essential for reliability testing in various applications
Dominant factors gap, the loss dissipation and thermal stress of the power devices are investigated in detail in this are considered, paper
Summary
Reliability and lifetime prediction of power converters have been a major research topic in the last few decades, especially for locomotives, high-power drives, electric vehicles, and renewable energy applications [1,2,3]. Powerswitching device, the heating sourcedevices is different due tobythe that the switching loss only exists in Even though the may standard dc and ac testing methods can achieveof thethe same thermal stress As of the ac power cycling, which result in various failure mechanisms power device. As the ac power reconfiguring control objectives of the testing and loading legs [12], some research efforts are devoted cycling mimics realistic conditions of the power devices and emulates various applications by to the H-bridge testing circuit [13,14,15,16,17,18]. Dominant factors gap, the loss dissipation and thermal stress of the power devices are investigated in detail in this (e.g., power factor, current amplitude, fundamental frequency, switching frequency) are considered, paper.
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