Abstract
In the article, a new method to improve the accuracy of the insulated-gate bipolar transistor (IGBT) junction temperature computations in the piecewise linear electrical circuit simulation (PLECS) software is proposed and described in detail. This method allows computing the IGBT junction temperature using a nonlinear compact thermal model of this device in PLECS. In the method, a nonlinear compact thermal model of the IGBT is used, which considers the dependence of thermal resistance on the junction temperature. The usefulness of the method is experimentally verified, and it is confirmed that it increases the accuracy of the computations and shortens their time. The differences between the measured and computed characteristics are discussed. The application of the developed method for computations resulted in a significant reduction of their error to only a few percent. The developed method can be applied in the system-level simulations of the power electronics converters.
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