Abstract
New technologies in non-volatile memories have been developed for several years based on phase-change alloys out of which, the most known is the Ge2Sb2Te5. The thermal investigation of the microelectronics device at cell scale is relevant since the heat transfer is the main limiting aspect for the optimal functioning of the device. More particularly, the thermal resistance at interfaces between the constitutive materials is of primary importance. We implemented a scanning thermal microscopy experiment in the 3D mode that allowed to fully characterizing the thermal properties of the cell at the nanoscale. The results lead to understand the 3D heat diffusion in the cell and more particularly the role of the vertical and horizontal interfaces.
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