Abstract
This work focuses on dipole antenna-coupled metal-oxide-metal diodes, which can be used for the detection of long wave infrared radiation. These detectors are defined using electron beam lithography and fabricated with shadow evaporation metal deposition. Along with offering complementary metal oxide semiconductor compatible fabrication, these detectors promise high speed and frequency selective detection without biasing, a small pixel footprint, and full functionality at room temperature without cooling. Direct current current-voltage characteristics are presented along with detector response to 10.6μm radiation. The detection characteristics can be tailored to provide for multispectral imaging in specific applications by modifying device geometries.
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