Abstract
Collector leakage current is an important electrical parameter in insulated gate bipolar transistor manual, which reflects its forward blocking characteristics. In this paper, based on IGBT structure and PN junction reverse current principle, by analyzing the components of collector leakage current, the variation characteristics at different temperature stages are obtained, and the thermal failure mechanism caused by positive feedback of IGBT junction temperature and collector leakage current is analyzed from the perspective of thermal balance. Finally, the collector leakage current of IGBT is tested experimentally, the failure mechanism of thermal balance is verified, and the chip failure characteristics are observed.
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