Abstract

Here we present the results of the study of electromechanical performance of the Ce0.8Gd0.2O1.95 (CGO) self-supported thin circular membranes with aluminum and titanium as contact electrode materials. The electromechanical performance of both membranes was investigated using highly sensitive interferometric technique and showed two principal excitations mechanisms: common electrostriction and thermal contribution due to the Joule heating. Operating the membranes at frequencies about MHz results in significant contribution of the thermal excitation due to a large power dissipation for every electrode. The excitation of the membrane with aluminum electrodes at the frequencies about 1 Hz leads to the formation of the Schottky barrier at the interface with CGO. That is why the electromechanical response was almost independent on frequency and electric field. Membrane with titanium electrodes showed a prevalence of electrostriction effect with weak frequency dispersion and significant enhancement of the response with temperature.

Highlights

  • The area of microelectromechanical systems (MEMS) is extensively growing during the past forty years

  • It is well known that electrostriction is an intrinsic property of all dielectrics whether they are polar or not. It originates from the interaction of the external electric field with the polarization of the unit cell induced by this field

  • The electrostriction response is quadratic with respect to the applied electric field and, if the applied field is sinusoidal, the response could be detected at the second harmonic of excitation [12]

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Summary

Introduction

The area of microelectromechanical systems (MEMS) is extensively growing during the past forty years. We focus on the problem of thermal excitation appearing as a result of Joule heating that can contribute to the EM performance of CGO self-supported membranes. We have demonstrated that the electrode material [10] becomes even more important in the high operating frequency range (100 Hz-10 kHz).

Results
Conclusion
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