Abstract
We find the thermally induced defects in undoped hydrogenated amorphous silicon carbon (a-Si1−xCx:H) by electron spin resonance and conductivity measurements. The equilibrium temperature (Te) determined from the annealing temperature-dependent density of dangling bonds after fast cooling decreases with increasing C content, from 190 °C for hydrogenated amorphous silicon to 150 °C for a-Si0.82C0.18:H. Possible microscopic mechanisms for the observed thermally induced defects in a-Si1−xCx:H alloys are discussed.
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