Thermal emission rates and capture cross-section of majority carriers at titanium levels in silicon

Abstract

The thermal emission rates and capture cross-sections of majority carriers on the titanium associated levels in the depletion region of reverse biased silicon p + n and n + n junctions have been investigated using the admittance spectroscopy technique and the dark capacitance transient method. We have found three levels associated with titanium in silicon. Its thermal activation energies are E c −238 ± meV, E c −512 ± 5 meV and E v + 320 ± 5 meV. For the E c −238 meV and E v + 320 meV levels, the thermal capture cross-sections are independent of the temperature: σ n = 1.01 × 10 −4 cm 2 and σ p = 1.55 × 10 −15 cm 2. The electron capture cross-section on the E c − 512 meV levels shows a slight dependence with the temperature, σ n = 2.01 × 10 −16( T 300 ) −(0.35±0.1) cm 2 in the [120–240 K] range, which can account for the nonradiative multiphonon emission process.