Abstract
Thermal emission rate and capture cross section of holes at the gold donor level are measured in silicon n+/p junctions with boron acceptor concentrations of 1.5×1012 cm−3 to 2.8×1015 cm−3, showing no boron concentration dependencies. The emission rate is independent of electric field in the range of 102 to 2×104 V/cm. However, the emission rate varies with the voltage applied to the insulated-gate guard ring, requiring re-evaluation of previously published data. The thermal capture cross section agrees with most of the published work. The magnitude of the capture cross section and its temperature independence support a neutral potential model for hole capture at the gold donor level.
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