Abstract

As a hard-brittle material, research into efficient processing methods of monocrystalline SiC with low damage has attracted a lot of attention. In this paper, removal behavior of monocrystalline SiC using micro-laser assisted method is analyzed using molecular dynamics method. This enables an in-depth theoretical analysis of thermal effects on material removal mechanism for 3C–SiC during nanogrinding process. Taking average laser pulse intensity as a variable, the micro deformation mechanism and machinability under the micro-laser assisted method are analyzed in detail. The results show that laser irradiation can directly affect material removal rate and subsurface damage depth of 3C–SiC. The results of this work significantly improve the understanding of the feasibility of micro-laser assisted method and its optimization for 3C–SiC.

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