Abstract
In this paper, molecular dynamics method was employed to investigate the nanoscratching process of gallium arsenide (GaAs) in order to gain insights into the material deformation and removal mechanisms in chemical mechanical polishing of GaAs. By analyzing the distribution of hydrostatic pressure and coordination number of GaAs atoms, it was found that phase transformation and amorphization were the dominant deformation mechanisms of GaAs in the scratching process. Furthermore, anisotropic effect in nanoscratching of GaAs was observed. The diverse deformation behaviors of GaAs with different crystal orientations were due to differences in the atomic structure of GaAs. The scratching resistance of GaAs(001) surface was the biggest, while the friction coefficient of GaAs(111) surface was the smallest. These findings shed light on the mechanical wear mechanism in chemical mechanical polishing of GaAs.
Highlights
Gallium arsenide (GaAs) wafer has applications in numerous fields, such as illumination, photoelectric detection, and solar energy, due to its excellent mechanical and electronic properties.For example, GaAs wafers with a super smooth surface are needed for the production of high-quality flexible solar cells and light emitting diode (LED) [1,2]
Yu et al found that high polishing speed using polishing slurry containing SiO2 particles leads to high material removal rate of GaAs [5]
We mainly investigated the out in this paper Molecular dynamics (MD) simulations to study the nanoscratching of GaAs
Summary
Gallium arsenide (GaAs) wafer has applications in numerous fields, such as illumination, photoelectric detection, and solar energy, due to its excellent mechanical and electronic properties. Chemical mechanical polishing (CMP) is critically required to fabricate GaAs wafer with a super smooth and planar surface. Matovu et al studied the material removal in the CMP process of GaAs with SiO2 particles [4]. Since the CMP process only involves the material deformation and removal of a few atomic layers, continuous mechanics is not fully applicable in the description of the removal process. In MD simulations, Han et al showed that ductile material removal was critical in realizing a super smooth surface of the silicon CMP process [10]. Crystals 2018, 8, x FOR PEER REVIEW mechanisms of a workpiece are closely related to the material removal in the CMP process. We mainly investigated the material deformation deformation and and removal removal mechanisms mechanisms in in GaAs
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