Abstract
Platinum diffusion in n-type silicon has been measured using various kinds of spectroscopic techniques for deep energy levels. Platinum acts as an acceptor which captures electrons. An energy level of 0.23±0.02 eV was found for the trap. The diffusion profile can be explained, as in the case of gold, with a kick-out mechanism involving silicon self-interstitials. From the model, an activation energy of 5.01 eV for silicon self-interstitial diffusion can be inferred.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
