Abstract
Adsorption and desorption of galliumchloride (GaCl) on GaAs surfaces are investigated to understand the self-limiting process in the chloride atomic layer epitaxy (ALE). Adsorption energy of GaCl on GaAs (100) surfaces is determined by temperature programmed desorption (TPD). As stabilized 2×4 surfaces and Ga stabilized 4×6 reconstructed surfaces are exposed to a GaCl molecular beam which is produced by a newly designed GaCl cell. GaCl desorption is observed on both 2×4 and 4×6 surfaces, while the desorption of GaClx (x=2, 3), AsClx (x=1∼3) and Cl2 are not detected. The adsorption energy of GaCl, Ead, is calculated to be 38 kcal/mol for the 2×4 surface and 32 kcal/mol for the 4×6 surface. The adsorbed species in chloride ALE process is also discussed with reference to the surface residence time of GaCl.
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