Abstract
Adsorption of gallium chloride (GaCl) on GaAs (100), (111)A and (111)B surfaces is studied by temperature programmed desorption (TPD). A GaCl molecular beam is produced by a newly designed GaCl cell. TPD measurements are carried out for (100) 2×4, (100) 4×6, (111)B √19×√19 and (111)A 2×2 reconstructed surfaces. GaCl desorption is observed from these surfaces, while the desorption of GaCl x ( x=2, 3), AsCl x ( x=1≁3) and Cl 2 is not detected. Two GaCl peaks appear at 220 and 330°C for (100) 2×4, 4×6 and (111)A 2×2 surfaces, and a single peak appears at 330°C for the (111)B surface. The GaCl peaks at 220 and 330°C are assigned to the adsorption on Ga and As sites, respectively. The adsorption energy of GaCl is calculated to be 38 kcal/mol for the As sites and 32 kcal/mol for the Ga sites. The self-limiting process in chloride atomic layer epitaxy (ALE) is discussed.
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