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https://doi.org/10.1109/relphy.2004.1315442
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Cite Publication Date: Apr 25, 2004 |
 Citations: 35 |
Affiliation: Samsung (South Korea)
Variation of DRAM retention time and reliability problem induced by thermal stress was investigated. Most of the DRAM cells revealed 2-state retention time with thermal stress. The effects of hydrogen annealing condition and fluorine implantation on the variation of retention time and reliability are discussed.
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