Thermal degradation of DRAM retention time: Characterization and improving techniques

Y.I Kim,K.H Yang,W.S Lee

doi:10.1109/relphy.2004.1315442

Thermal degradation of DRAM retention time: Characterization and improving techniques

Y.I Kim, K.H Yang + Show 1 more

https://doi.org/10.1109/relphy.2004.1315442

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Publication Date: Apr 25, 2004

Citations: 34

Affiliation: Samsung (South Korea)

#Variation Of Retention Time #Fluorine Implantation + Show 8 more

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Abstract

Variation of DRAM retention time and reliability problem induced by thermal stress was investigated. Most of the DRAM cells revealed 2-state retention time with thermal stress. The effects of hydrogen annealing condition and fluorine implantation on the variation of retention time and reliability are discussed.

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