Abstract
Tungsten nitrido complexes of the type WN(NR2)3 have been demonstrated to serve as single-source precursors for metal organic chemical vapor deposition (MOCVD) of WNxCy barrier layers. To elucidate the thermal decomposition mechanisms for WN(NMe2)3 and to optimize conditions for deposition of WNxCy films, in-situ Raman spectroscopy experiments were carried out in an up-flow, cold-wall MOCVD reactor. In this study, Raman spectra were detected at temperatures from 159 oC to 474 oC. Density Functional Theory (DFT) calculations were also performed to assess possible steps in the mechanistic pathway.
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