Abstract
For some optoelectronic devices, the optical characteristics of the device are a strong function of the device temperature. An example of this is the self- electro-optic effect device (SEED).[1] SEEDs make use of the shift in wavelength of the exciton absorption maxima that occurs as a function of a changing electrical field across multiple quantum well material.[2] For a typical device, the absorption maxima must be shifted by 3 to 5nm to obtain good contrast between the absorptive and reflective states. A change in the device temperature, however, can also change the location of the exciton absorption maxima.[3] For GaAs/AlGaAs devices the absorption maxima shifts approximately 0.28nm/°C.[4] Thus, it becomes necessary to carefully design the SEED mount to minimize the temperature gradient and, therefore, this temperature induced shift across the chip.
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