Abstract
The quantum confined Stark effect has found wide application in devices for optical modulation and bistable switching. Whilst normally-incident strained layer modulators and self electro-optic effect devices (SEEDs) have been demonstrated [1-3], the introduction of strain has provided little performance advantage. Recently there has been a growing interest in the properties of strained piezoelectric structures resulting from growth on orientations other than the (100) [4-6]. In this communication we present the results of an investigation of the electro-optical absorption modulation properties of a strained InGaAs/GaAs multiple quantum well p-i(MQW)-n grown on a (111)B GaAs substrate. Subsequently we demonstrate optical bistability using the self electro-optic effect without the application of an external bias.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
