Abstract
The thermal conductivity of AlN single crystals grown by physical vapor transport (PVT) and hydride vapor phase epitaxy (HVPE) was measured in the range of 30 to 325 K by the 3ω method. The measured room-temperature thermal conductivity ranged from 268 to 374 W m−1 K−1. Higher thermal conductivity correlated with higher transparency at 265 nm and lower total impurity levels.
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