Abstract
Freestanding AlN substrates with various carbon (C) concentrations were prepared from C-doped thick layers grown by hydride vapor phase epitaxy (HVPE) on bulk AlN substrates prepared by physical vapor transport (PVT). The structural properties of the AlN substrates up to a C concentration of 3×1019 cm-3 were the same as those of the nominally undoped substrates, while the absorption coefficient α at 265 nm was increased by C doping from 6.6 to 97 cm-1, when C concentration changed from <2×1017 to 1×1019 cm-3, respectively. Photoluminescence (PL) below 4.0 eV also increased by C doping.
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