Abstract
AbstractA thick AlN layer was grown on a (111)Si starting substrate at 1230 ºC by hydride vapor phase epitaxy (HVPE). A 112‐μm‐thick freestanding AlN substrate was successfully prepared by removing the Si substrate using a chemical etchant. The AlN substrate was transparent with a smooth (0001) surface. Immersion of the AlN substrate in an aqueous KOH solution revealed that the AlN layer grown on the (111)Si substrate predominately has Al‐polarity. Owing to improvement of crystalline quality by thick layer growth, a near‐band‐edge (NBE) emission could be obtained at 5.92 eV in the room‐temperature photoluminescence (PL) spectrum taken at the top surface of the AlN substrate. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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