Abstract
We have measured high spatial/depth resolution (∼2–3 μm) thermal conductivity (κ) at 300 K of both fully and partially coalesced GaN/sapphire (0001) samples fabricated by lateral epitaxial overgrowth. On the fully coalesced sample we found 1.86W/cm K<κ<2.05 W/cm K over a distance of approximately 50 μm. One of the partially coalesced samples had 2.00 W/cm K<κ<2.10 W/cm K on the overgrown regions, as identified by atomic force microscopy imaging. These latter results are the highest thermal conductivity values reported on GaN material. A correlation between low threading dislocation density and high thermal conductivity values was established.
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