Thermal conductivity of α-U with point defects

Abstract

We develop a theoretical model for thermal conductivity of α-U that combines density functional theory calculations and the coupled electron–phonon Boltzmann transport equation. The model incorporates both electron and phonon contributions to thermal conductivity and achieves good agreement with experimental data over a wide temperature range. The dominant scattering mechanism governing thermal transport in α-U at different temperatures is examined. By including phonon–defect and electron–defect scatterings in the model, we study the effect of point defects including U-vacancy, U-interstitial, and Zr-substitution on the thermal conductivity of α-U. The degradation of anisotropic thermal conductivity due to point defects as a function of defect concentration, defect type, and temperature is reported. This model provides insights into the impact of defects on both phonon and electron thermal transport. It will promote the fundamental understanding of thermal transport in α-U and provide a ground for investigation of coupled electron–phonon transport in metallic materials.