Thermal conduction in Si and SiGe phononic crystals explained by phonon mean free path spectrum

Abstract

Thermal phonon transport in single-crystalline Si, amorphous SiGe, and poly-SiGe nanostructures was investigated experimentally at room temperature. The characteristic length dependence of thermal conductivity was compared across these three materials by changing the shortest distance between the circular holes of phononic crystals formed in the membranes. The dependences clearly differ for these materials, and these differences can be explained by the thermal phonon mean free path spectra of the three materials. Nanostructuring has a larger impact on thermal conductivity reduction when the characteristic length is comparable to that in the region where the thermal phonon mean free path spectrum is dense. The results suggest that thermal phonon mean free path spectra can be estimated qualitatively by thermal conductivity measurements with characteristic length sweeps.