Abstract
The noise parameters of AlGaN/GaN-HEMTs are measured between 298 K and 423 K. The temperature dependent access resistances are de-embedded and the intrinsic noise parameters are studied as a function of temperature. It is shown that the parasitic access resistances are limiting the high-frequency noise performance of the AlGaN/GaN-HEMT.The intrinsic noise sources are extracted and a noise model is derived and verified for a MMIC amplifier.
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