Investigation of the hot-carrier degradation in Si/SiGe HBT's by intrinsic low frequency noise source modeling

M Borgarino,R Menozzi,J Kuchenbecker,T Kovacic,J.G Tartarin,F Fantini,R Plana,L Bary,J Graffeuil

doi:10.1109/gaasrw.2001.995726

Investigation of the hot-carrier degradation in Si/SiGe HBT's by intrinsic low frequency noise source modeling

M Borgarino, R Menozzi + Show 7 more

https://doi.org/10.1109/gaasrw.2001.995726

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Publication Date: Oct 21, 2001

Affiliation: University of Modena and Reggio Emilia, University of Parma, Université Toulouse III - Paul Sabatier, French National Centre for Scientific Research, Laboratory for Analysis and Architecture of Systems, CMC Microsystems (Canada)

#Intrinsic Noise Source #Low-frequency Noise + Show 8 more

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Abstract

The characterization of the excess low-frequency noise (LFN) properties of electronic devices is a useful tool in the field of reliability physics, because LFN is related to the interactions between charge carriers and material imperfections and defects. The LFN behavior of a bipolar transistor can be described in terms of extrinsic or intrinsic noise sources. The noise representation based on intrinsic noise sources allows more insight, because each source is associated with a particular transistor region. The availability of an intrinsic noise source model therefore allows to locate the degradation occurring during a life test.

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