Abstract
Temperature effect modelling and analysis have been carried out on 0.25 μm gate length AlGaN/GaN HEMT grown on SiC substrate over the temperature range from − 40 to 150°C by on-wafer S-parameter measurements up to 50 GHz. The temperature behaviour of the DC and equivalent circuit parameters including f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</inf> and f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</inf> were analyzed. The results provide some valuable insights for future design optimizations of advanced GaN based MMICs.
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