Thermal capture of electrons and holes at zinc centers in silicon

Abstract

The thermal capture rates of electrons and holes at zinc centers in silicon are obtained in reversed biased N + P and P + N diodes from junction capacitance transients due to capture of photogenerated and injected carriers. The electric field dependence of the thermal capture rates of holes at singly ionized zinc centers is E −1·1, while that at doubly ionized zinc centers is exp(− E/ E 0). The temperature dependence of the thermal capture rate of holes at doubly ionized zinc centers is small. The thermal capture rate of electrons at neutral zinc centers is 2·0×10 −9 cm 3/ sec with very little field dependences, while that at singly ionized zinc centers is 5·0×10 −11 cm 3/ sec with very little field and temperature dependence below 170°K. Auger-impact emission rate of electrons trapped at doubly ionized zinc centers by electrons is 3·5×10 −10 cm 3/ sec with very little field and temperature dependence below 170°K.