Abstract
Thermal annealing of n-type liquid phase epitaxial gallium arsenide is examined. It is shown that low 10 15 cm -3 n-type electrically active impurity levels can be reduced to 3 × 10 13 cm -3 by long term annealing. Conversely, it is also shown that p-type liquid phase epitaxial (LPE) gallium arsenide when thermally annealed will show an increase in the net acceptor density. A mechanism for this effect is proposed.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
